HAT2050T silicon n channel power mos fet high speed power switching ade-208-660a (z) 2nd. edition february 1999 features ? low on-resistance ? capable of 4 v gate drive ? low drive current ? high density mounting outline absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v drain current i d 1a drain peak current i d(pulse) note1 4a body-drain diode reverse drain current i dr 1a channel dissipation pch note2 1.0 w tssop? 1, 8 drain 2, 3, 6, 7 source 4, 5 gate 1 2 3 4 8 7 6 5 g d s 2 4 1 s 3 g d s s 5 8 6 7 mos1 mos2
HAT2050T 2 note: 1.pw 10 m s, duty cycle 1 % 2.1 drive operation : when using the glass epoxy board (fr4 40 x 40 x 1.6 mm), pw 10s 2 drive operation : when using the glass epoxy board (fr4 40 x 40 x 1.6 mm), pw 10s electrical characteristics (ta = 25 c) note: 4.pulse test channel dissipation pch note3 1.5 w channel temperature tch 150 c storage temperature tstg C 55 to + 150 c item symbol min typ max unit test conditions drain to source breakdown voltage v (br)ds s 100 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gs s 20 v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 16 v, v ds = 0 zero gate voltege drain current i dss 1 m av ds = 100 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.3 2.3 v v ds = 10 v, i d = 1 ma static drain to source on state resistance r ds(on) 0.56 0.75 w i d = 0.5 a, v gs = 10 v note4 r ds(on) 0.72 1.0 w i d = 0.5 a, v gs = 4 v note4 forward transfer admittance |y fs |0.71.1s i d = 0.5 a, v ds = 10 v note4 input capacitance ciss 90 pf v ds = 10 v output capacitance coss 42 pf v gs = 0 reverse transfer capacitance crss 20 pf f = 1mhz turn-on delay time t d(on) 11nsv gs = 4 v, i d = 0.5 a rise time t r 24nsv dd @ 10 v turn-off delay time t d(off) 14ns fall time t f 11ns bodyCdrain diode forward voltage v df 0.84 1.1 v i f = 1 a, v gs = 0 note4 bodyCdrain diode reverse recovery time t rr 85nsi f = 1 a, v gs = 0 dif/ dt = 20 a/ m s item symbol ratings unit
HAT2050T 3 main characteristics 0 50 100 150 200 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.2 1 3 10 30 100 5 4 3 2 1 0 246810 5 4 3 2 1 0 2468 10 2.0 1.5 1.0 0.5 10v 6 v 5 v 8 v pulse test 4.0 v tc = 75 c 25 c ?5 c v = 10 v ds pulse test 3.0 v 200 10 s 100 s 1 ms pw = 10 ms channel dissipation pch (w) ambient temperature ta ( c) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d maximum safe operation area drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics note 5 : when using the glass epoxy board (fr4 40x40x1.6 mm) 2 drive operation 1 drive operation operation in this area is limited by r ds(on) test condition : when using the glass epoxy board (fr4 40x40x1.6 mm), pw < 10 s ta = 25 c 1 shot pulse 1 drive operation dc operation (pw < 10 s) note5 v = 2.5 v gs
HAT2050T 4 2.0 1.6 1.2 0.8 0.4 0 2 4 6 8 10 0.2 0.5 1 2 5 10 20 20 10 5 1 2 0.5 0.2 2.0 1.6 1.2 0.8 0.4 ?0 0 40 80 120 160 0 5 2 1 0.2 0.5 0.1 0.05 1, 0.5 a 4 v i = 2 a d 0.5 a 1 a pulse test v = 10 v gs 4 v pulse test v = 2.5 v gs pulse test 0.02 0.05 0.1 0.2 0.5 1 2 25 c tc = ?5 c 75 c ds v = 10 v pulse test i = 2 a d 2 a 1, 0.5 a gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage drain current i (a) d drain to source on state resistance r ( ) w ds(on) static drain to source on state resistance vs. drain current case temperature tc ( c) r ( ) ds(on) static drain to source on state resistance w static drain to source on state resistance vs. temperature forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current drain current i (a) d
HAT2050T 5 0.2 0.5 1 2 5 10 0.1 500 200 100 20 50 10 5 50 40 30 20 10 0 0.8 1.6 2.4 3.2 4.0 0 5 20 50 10 0.02 0.05 0.1 0.2 0.5 1 0.01 di/dt = 20 a/ s v = 0, ta = 25 c gs 10 8 6 4 2 2 1 100 0 1020304050 1000 300 100 30 10 3 1 v = 0 f = 1 mhz gs ciss coss crss v gs v ds i = 1 a d v = 5 v 10 v 20 v dd v = 20 v 10 v 5 v dd t f r t d(off) t d(on) t v = 4 v, v = 10 v pw = 5 s, duty < 1 % gs dd reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics drain current i (a) d switching time t (ns) switching characteristics
HAT2050T 6 5 4 3 2 1 0 0.4 0.8 1.2 1.6 2.0 5 v v = 0 gs 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse test dm p pw t d = pw t ch ?f(t) = s (t) ? ch ?f ch ?f = 166 c/w, ta = 25 c q g q q pulse width pw (s) normalized transient thermal impedance s (t) g normalized transient thermal impedance vs. pulse width (1 drive operation) when using the glass epoxy board (fr4 40x40x1.6 mm) source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. souece to drain voltage
HAT2050T 7 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse dm p pw t d = pw t ch ?f(t) = s (t) ? ch ?f ch ?f = 210 ?/w, ta = 25 ? q g q q vin monitor d.u.t. vin 4 v r l v = 10 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f when using the glass epoxy board (fr4 40x40x1.6 mm) pulse width pw (s) normalized transient thermal impedance s (t) g switching time test circuit switching time waveform normalized transient thermal impedance vs. pulse width (2 drive operation)
HAT2050T 8 package dimensions unit: mm cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachis or any third partys patent, copy- right, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have re- ceived the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, con- tact hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or fail- ure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equip- ment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachis sales office for any questions regarding this document or hitachi semiconductor prod- ucts. hitachi code eiaj code jedec code ttp?d 0.13 m 0.65 0.10 1 4 8 5 3.00 0.1 0.22 +0.08 ?.07 1.10 max 4.40 0.1 6.40 0.20 0 ?8 0.07 0.17 0.05 +0.03 ?.04 0.50 0.10
HAT2050T 9 hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 1998. all rights reserved. printed in japan. hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 url northamerica : http:semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia (singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm asia (taiwan) : http://www.hitachi.com.tw/e/product/sicd_frame.htm asia (hongkong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. taipei branch office 3f, hung kuo building. no.167, tun-hwa north road, taipei (105) tel: <886> (2) 2718-3666 fax: <886> (2) 2718-8180 hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road, tsim sha tsui, kowloon, hong kong tel: <852> (2) 735 9218 fax: <852> (2) 730 0281 telex: 40815 hitec hx hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to:
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